Tin Oxide Nanowires: The Influence of Trap States on Ultrafast Carrier Relaxation
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چکیده
منابع مشابه
Tin Oxide Nanowires: The Influence of Trap States on Ultrafast Carrier Relaxation
We have studied the optical properties and carrier dynamics in SnO(2) nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have been employed to investigate the ultrafast relaxation dynamics of photogenerated carriers in the SnO(2) NWs. Steady state transmission measurements revealed that the band gap o...
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The aim of this research is preparation of SnO2 nanowires by means of Thermal chemical reaction vapor transport deposition (TCRVTD) method from SnO powders. The morphology, chemical composition and microstructure properties of the nanowires are characterized using field emission scanning electron microscope (FE-SEM), EDS, and XRD. The XRD diffraction patterns reveal that the SnO2 nanowires have...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2009
ISSN: 1931-7573,1556-276X
DOI: 10.1007/s11671-009-9323-9